FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|
| FHW0603UC9N5KST | 9.5nH | ±10% | 26 | 0.15 | |
| FHW0603UC9N1GST | 9.1nH | ±2% | 26 | 0.15 | |
| FHW0603UC9N1JST | 9.1nH | ±5% | 26 | 0.15 | |
| FHW0603UC9N1KST | 9.1nH | ±10% | 26 | 0.15 | |
| FHW0603UC8N7GST | 8.7nH | ±2% | 28 | 0.12 | |
| FHW0603UC8N7JST | 8.7nH | ±5% | 28 | 0.12 | |
| FHW0603UC8N7KST | 8.7nH | ±10% | 28 | 0.12 | |
| FHW0603UC8N2GST | 8.2nH | ±2% | 28 | 0.12 | |
| FHW0603UC8N2JST | 8.2nH | ±5% | 28 | 0.12 | |
| FHW0603UC8N2KST | 8.2nH | ±10% | 28 | 0.12 | |
| FHW1210HC8N2KGT | 8.2nH | ±10% | 30 | 0.07 | |
| FHW0805UC8N2GGT | 8.2nH | ±2% | 35 | 0.2 | |
| FHW0805UC8N2JGT | 8.2nH | ±5% | 35 | 0.2 | |
| FHW0805UC8N2KGT | 8.2nH | ±10% | 35 | 0.2 | |
| FHW0805UC7N8GGT | 7.8nH | ±2% | 35 | 0.2 |