FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|
| FHW0805UC5N4GGT | 5.4nH | ±2% | 50 | 0.05 | |
| FHW0805UC5N4KGT | 5.4nH | ±10% | 50 | 0.05 | |
| FHW0603UC5N1JST | 5.1nH | ±5% | 20 | 0.12 | |
| FHW0603UC5N1GST | 5.1nH | ±2% | 20 | 0.12 | |
| FHW0603UC5N1KST | 5.1nH | ±10% | 20 | 0.12 | |
| FHW0805UC5N1JGT | 5.1nH | ±5% | 50 | 0.05 | |
| FHW0805UC5N1GGT | 5.1nH | ±2% | 50 | 0.05 | |
| FHW0805UC5N1KGT | 5.1nH | ±10% | 50 | 0.05 | |
| FHW0603UC4N7GST | 4.7nH | ±2% | 20 | 0.116 | |
| FHW0603UC4N7JST | 4.7nH | ±5% | 20 | 0.116 | |
| FHW0603UC4N7KST | 4.7nH | ±10% | 20 | 0.116 | |
| FHW1210HC4N7KGT | 4.7nH | ±10% | 30 | 0.065 | |
| FHW1210HC4N7JGT | 4.7nH | ±5% | 30 | 0.065 | |
| FHW1008UC4N7JGT | 4.7nH | ±5% | 50 | 0.045 | |
| FHW1008UC4N7KGT | 4.7nH | ±10% | 50 | 0.045 |