Shielding structure, ultra-low resistance and ultra-high current, suitable for SMD mounting, applied to all kinds of DC TO DC circuits, and suitable for portable electronic products such as smart phones and tablet computers.
Shielding structure, ultra-low resistance and ultra-high current, suitable for SMD mounting, applied to all kinds of DC TO DC circuits, and suitable for portable electronic products such as smart phones and tablet computers.
| Part Number | Size | Inductance | RDC （Ω）Max | Isat （A） | Tolerance | Inductance Test Frequency | Inductance Test Voltage | Irms Max (A) | RDC(Ω) | L(mm) | W(mm) | T(mm) | Datasheet |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PFM252012-6R8MTL00 | 6.8µH | 3.2mm | ±20% | 2.5mm | 2.0mm | 1.2mm | |||||||
| PFM252010-6R8MTL00 | 6.8µH | 3.2mm | ±20% | ||||||||||
| PFM201610-6R8MTL00 | 6.8µH | 3.2mm | ±20% | ||||||||||
| PFM322512-5R6MTS00 | 5.6µH | 3.2mm | ±20% | ||||||||||
| PFM322512-4R7MTS00 | 4.7µH | 3.2mm | ±20% | 1MHz | 1V | 2 | 0.135 | 3.2mm | 2.5mm | 1.2mm | |||
| PFM252012-4R7MTS00 | 4.7µH | 3.2mm | ±20% | 1MHz | 1V | 1.5 | 0.17 | 2.5mm | 2.0mm | 1.2mm | |||
| PFM252010-4R7MTS00 | 4.7µH | 3.2mm | ±20% | 1MHz | 1V | 1.6 | 0.18 | 2.5mm | 2.0mm | 1.0mm | |||
| PFM201610-4R7MTS00 | 4.7µH | 3.2mm | ±20% | 1MHz | 1V | 1.4 | 0.22 | 2.0mm | 1.6mm | 1.0mm | |||
| PFM322512-4R7MTL00 | 4.7µH | 3.2mm | ±20% | ||||||||||
| PFM252012-4R7MTL00 | 4.7µH | 3.2mm | ±20% | 2.5mm | 2.0mm | 1.2mm | |||||||
| PFM201610-4R7MTL00 | 4.7µH | 3.2mm | ±20% | ||||||||||
| PFM201610-4R7MTS03 | 4.7µH | 3.2mm | ±20% | ||||||||||
| PFM252010-4R7MTSD3 | 4.7µH | 3.2mm | ±20% | ||||||||||
| PFM322512-3R3MTS00 | 3.3µH | 3.2mm | ±20% | 1MHz | 1V | 2.5 | 0.095 | 3.2mm | 2.5mm | 1.2mm | |||
| PFM252012-3R3MTS00 | 3.3µH | 3.2mm | ±20% | 1MHz | 1V | 1.8 | 0.097 | 2.5mm | 2.0mm | 1.2mm |